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| HY75N10T Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 100V / 75A N-Channel Enhancement Mode MOSFET | |||
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Electrical Characteristics ( TC=25, Unless otherwise noted )
Parameter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0VãID=250uA
100
-
Gate Threshold Voltage
VGS(th)
VDS=VGSãID=250uA
2
3
Drain-Source On-State Resistance RDS(ON)
VGS=10VãID=30A
-
10
Zero Gate Voltage Drain Current IDSS
VDS=80VãVGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+20VãVDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=50Vï¼ID=30A
VGS=10V
-
156
-
26.8
-
34
Turn-On Delay Time
td(on)
-
32.2
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=50Vï¼ID=30A
-
16.8
td(off)
VGS=10Vï¼RG=3.6W
-
62
Turn-Off Fall Time
tf
-
42
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=30Vï¼VGS=0V
f=1.0MHZ
Reverse Transfer Capacitance
Crss
-
4600
-
320
-
120
Gate Resistance
Rg
-
1.6
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
Diode Forward Voltage
VSD
IS=30AãVGS=0V
-
0.84
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0VãIS=30A
Qrr
di/dt=100A/us
-
72
-
210
NOTE : Pulse Test : Pulse Width ⦠300us, duty cycle ⦠2%
HY75N10T
Max. Units
-
V
4
V
13
mW
1
uA
100
nA
-
-
nC
-
-
-
ns
-
-
-
-
pF
-
-
W
75
A
1.4
V
-
ns
-
uC
REV.1, 8-May-2012
PAGE.2
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