HY4N70T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 700V / 4A N-Channel Enhancement Mode MOSFET

HY4N70T / HY4N70FT
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
8
V_GS= 20V~ 8.0V
10
V_DS =50V
6
6.0V
4
2
5.0V
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
10
8
1
T_J = 125^oC
25^oC
-55^oC
0.1
1
3
5
7
9
V_GS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
10
I_D =2.0A
8
6
6
4
4
V_GS=10V
2
V_GS = 20V
2
0
0
2
4
6
8
I_D - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
0
10
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
Fig.4 On-Resistance vs Gate to Source Voltage
1000
800
f = 1MHz
V_GS = 0V
600
Ciss
400
200
Crss
Coss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
12
I_D =4.0A
10
VDS=560V
VDS=350V
8
VDS=140V
6
4
2
0
0 2 4 6 8 10 12 14 16
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
REV 1.0, 24-Sept-2012
PAGE.3