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HY4N70T Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 700V / 4A N-Channel Enhancement Mode MOSFET
HY4N70T / HY4N70FT
Electrical Characteristics ( TC=25℃, Unless otherwise noted )
Paramter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0V、ID=250uA
700
-
Gate Threshold Voltage
VGS(th)
VDS=VGS、ID=250uA
2.0
-
Drain-Source On-State Resistance RDS(ON)
VGS=10V、ID=2A
-
2.5
Zero Gate Voltage Drain Current IDSS
VDS=700V、VGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+30V、VDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=560V,ID=2A
VGS=10V
-
14.8
-
2.8
-
3.6
Turn-On Delay Time
td(on)
-
14.8
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=350V,ID=2A
-
36.8
td(off)
VGS=10V,RG=25W
-
21.8
Turn-Off Fall Time
tf
-
18.2
Input Capacitance
Ciss
-
500
Output Capacitance
Coss
VDS=25V,VGS=0V
f=1.0MHZ
-
65
Reverse Transfer Capacitance
Crss
-
2.5
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
Max. Pulsed Source Current
Diode Forward Voltage
ISM
-
VSD
IS=4A、VGS=0V
-
-
-
-
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0V、IS=4A
Qrr
di/dt=100A/us
-
220
-
1.3
Max.
-
4.0
2.8
10
+100
18.4
-
-
18
46
28
26
-
-
-
4.0
16.0
1.4
-
-
Units
V
V
W
uA
nA
nC
ns
pF
A
A
V
ns
uC
NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%
REV 1.0, 24-Sept-2012
PAGE.2