HWL30NPA Datasheet, PDF (4/7 Pages) Hexawave, Inc – L-Band GaAs Power FET

Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V, I_DS=0.5I_DSS
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Po (dBm)
30
25
20
15
Gain
10
5
0
0
4
PAE (%)
70
60
50
Po
40
Gain
Eff
30
20
10
0
8
12
16 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V, I_DS=0.5I_DSS
Po (dBm)
30
PAE (%)
70
25
20
15
Gain
10
5
60
50
Po
40
Gain
Eff
30
20
10
0
0
1 3 5 7 9 11 13 15 17 19 21 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.