HWL30NPA Datasheet, PDF (2/7 Pages) Hexawave, Inc – L-Band GaAs Power FET

Typical Performance at 25°C
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency vs Vds
@ f=0.9GHz,Ids=0.5I_DSS
Po (dBm)
35
PAE (%)
60
30
55
25
50
Po
PAE
20
45
15
40
10
35
1
2
3
4
5
6 Vds (V)
Output Power & Efficiency vs Vds
@ f=1.9GHz,Ids=0.5I_DSS
Po (dBm)
35
PAE (%)
60
30
55
25
50
Po
PAE
20
45
15
40
10
35
1
2
3
4
5
6 Vds (V)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.