HWL30NPA_V1_15 Datasheet, PDF (3/7 Pages) Hexawave, Inc – L-Band GaAs Power FET

HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
Po (dBm)
30
PAE (%)
60
25
50
Po
20
40
Gain
15
30
Eff
10
20
Gain
5
10
0
0
0
4
8
12
16 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
Po (dBm)
30
PAE (%)
60
25
50
Po
20
40
Gain
15
30
Eff
10
20
Gain
5
10
0
0
0
5
10
15
20
25 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.