HWL30NPA_V1_15 Datasheet, PDF (1/7 Pages) Hexawave, Inc – L-Band GaAs Power FET

Features
• ^{Low Cost GaAs Power FETs}
• ^{Class A or Class AB Operation}
• ^{High Efficiency}
• ^{3V to 6V Operation}
Description
The HWL30NPA is a Medium Power GaAs FET using
surface mount type plastic package for various L-band
applications. It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
1
213
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Absolute Maximum Ratings
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D Drain Current
I_G Gate Current
T_CH Channel Temperature
T_STG Storage Temperature
P_T* Total Power Dissipation
* _{mounted on an infinite heat sink.}
+7V
-5V
I_DSS
3mA
150_°C
-65 to +150_°C
2.8W
PA Package (SOT-89)
Outline Dimensions
Electrical Specifications (TA=25_°C) f = 1900 MHz for all RF Tests
Symbol
I_DSS
V_P
g_m
R_th
P_1dB
G_1dB
PAE
Parameters & Conditions
Saturated Current at V_DS=3V, V_GS=0V
Pinch-off Voltage at V_DS=3V, I_D=30mA
Transconductance at V_DS=3V, I_D=300mA
Thermal Resistance
Power Output at 1dB Compression Point
V_DS=3V, I_D=0.5I_DSS
V_DS=5V, I_D=0.5I_DSS
Gain at 1dB Compression Point
V_DS=3V, I_D=0.5I_DSS
V_DS=5V, I_D=0.5I_DSS
Power-Added Efficiency (P_OUT = P_1dB)
V_DS=3V, I_D=0.5I_DSS
V_DS=5V, I_D=0.5I_DSS
Units
mA
V
mS
°^C/W
dBm
dB
%
Min.
500
-3.5
200
-
24.5
27.5
9
10
-
Typ.
600
-2.0
300
35
25.5
28.5
10
11
40
40
Max.
900
-1.5
-
45
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.