HWL27NPB_V1_15 Datasheet, PDF (3/4 Pages) Hexawave, Inc – L-Band GaAs Power FET

HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=200mA
Po (dBm)
PAE (%)
30
60
25
50
20
15
Gain
10
40
Po
30
Gain
PAE
20
5
10
0
0
0.7
0.8
0.9
1.0
1.1 f (GHz)
Power Derating Curve
1
(25,0.7)
(150,0)
0
0
50 100 150 225
Case Temperature,T_C (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.