HWL27NPB_V1_15 Datasheet, PDF (2/4 Pages) Hexawave, Inc – L-Band GaAs Power FET

Typical Performance at 25°C
HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
Po (dBm)
PAE (%)
25
60
20
15
10
Gain
5
50
40
Po
Gain
30
Eff
20
10
0
0
-8
-4
0
4
8
12 ^{Pin (dBm)}
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
Po (dBm)
30
PAE (%)
60
25
20
15
Gain
10
50
40
Po
Gain
30
Eff
20
5
10
0
0
0
5
10
15
20
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.