HWL30YRF_V1_15 Datasheet, PDF (2/4 Pages) Hexawave, Inc – L-Band GaAs Power FET

HWL30YRF
L-Band GaAs Power FET
Typical Performance at 25°C
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm)
40
PAE (%)
60
30
20
Gain
10
50
Po
40
Gain
30
Eff
20
10
0
0
0 2 4 6 8 10 12 14 16 18 20 22 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=2.4GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm)
40
30
20
Gain
10
0
0
PAE (%)
60
50
Po
40
Gain
30
Eff
20
10
0
5
10
15
20
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.