HWL30YRF_V1_15 Datasheet, PDF (1/4 Pages) Hexawave, Inc – L-Band GaAs Power FET

Features
• ^{Low Cost GaAs Power FET}
• ^{Class A or Class AB Operation}
• ^{Typical 16.5 dB Gain}
• ^{5V to 10V Operation}
HWL30YRF
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
Description
The HWL30YRF is a Medium Power GaAs FET
designed for various L-band & S-band
applications. It is presently offered in low cost
ceramic package.
Absolute Maximum Ratings
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D Drain Current
I_G Gate Current
T_CH Channel Temperature
T_STG
P_T*
Storage Temperature
Power Dissipation
* mounted on an infinite heat sink.
+15V
-5V
I_DSS
3 mA
175°C
-65 to +175°C
6W
RF Package (Ceramic)
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
I_DSS
Saturated Current at V_DS=5V, V_GS=0V
V_P
Pinch-off Voltage at V_DS=5V, I_D=30mA
gm
Transconductance at V_DS=5V, I_D=300mA
mA
500
V
-3.5
mS
-
R_th
P_1dB
G_1dB
PAE
Thermal Resistance
Power Output at Test Points
V_DS=10V, I_D=0.5I_DSS
Gain at 1dB Compression Point
V_DS=10V, I_D=0.5I_DSS
Power-Added Efficiency (P_OUT = P_1dB)
V_DS=10V, I_D= I_D=0.5I_DSS
°C/W
-
dBm
30
dB
15
%
35
Typ.
600
-2.0
300
15
31
16.5
45
Max.
900
-1.5
-
25
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.