HWF1686YC Datasheet, PDF (2/3 Pages) Hexawave, Inc – L-Band Power FET Via Hole Chip

Typical Performance (T_A=25_°C)
HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
Output Power, Efficiency & Gain vs. Input Power
V_DS=10V, I_DS=0.5I_DSS
f=2.4GHz
40
35
30
25
20
15
10
5
0
0
P_out
2
4
6
50
η
add
40
30
20
10
0
8 10 12 14 16 18 20
Power Derating Curve
6
5
4
3
2
1
0
0
25
50
75 100 125 150 175 200
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.