HWF1686RA_V3_15 Datasheet, PDF (2/3 Pages) Hexawave, Inc – L-Band GaAs Power FET

Typical Performance at 25_°C
HWF1686RA
L-Band GaAs Power FET
June 2005 V3
Output Power, Efficiency & Gain vs. Input Power
V_DS=10V, I_DS=0.5I_DSS
f=2.4GHz
40
50
η
35
add
40
30
25
P_out
30
20
15
20
10
10
5
0
0
0
2
4
6
8 10 12 14 16 18 20
Power Derating Curve
6
Gain
4
(25,3.5)
2
P_in (dBm)
(175,0)
0
0
50
100
150
200
Case Temperature,T_C (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.
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