HWF1686RA_V3_15 Datasheet, PDF (1/3 Pages) Hexawave, Inc – L-Band GaAs Power FET

Features
• ^{Output Power: P}1dB^{=30 dBm (typ.)}
• ^{High Gain: GL=16 Db (typ.)}
• ^{High Efficiency: PAE =45% (typ.)}
• ^{High Linearity: IP3=45 dBm (typ.)}
• ^{Low Cost}
Description
The HWF1686RA is a medium power GaAs
MESFET designed for various RF and Microwave
applications. It is presently offered in a low cost,
surface-mountable ceramic package.
Absolute Maximum Ratings
V_DS[1] Drain to Source Voltage
+15V
V_GS Gate to Source Voltage
-5V
I_D Drain Current
I_DSS
I_G Gate Current
2 mA
T_CH Channel Temperature
175_°C
T_STG
P_T^[2]
Storage Temperature
Power Dissipation
-65 to +175_°C
3.5 W
[1] Hexawave recommends that the quiescent
drain-source operating voltage (V_DS) should not
exceed 10 Volts.
[2]Mounted on an infinite heat sink.
HWF1686RA
L-Band GaAs Power FET
June 2005 V3
Outline Dimensions
RA Package (Ceramic)
Electrical Specification at 25_°C
Symbol
Parameters
Conditions
Units Min.
I_DSS Saturated Drain Current
V_DS=3V, V_GS=0V
mA 300
V_P
Pinch-off Voltage
g_m
Transconductance
V_DS=3V, I_DS=20 mA
V_DS=3V, I_DS=200 mA
V
-3.5
mS
-
R_th
Thermal Resistance
Channel to Case
°^C/W
-
P_1dB Output Power @1dB Gain
V_DS=10V
dBm 29.0
G_L
PAE
IP₃
Linear Power Gain
Power-added Efficiency (P_out = P_1dB)
Third-order Intercept Point^[3]
I_DS=0.5I_DSS
f=2.4 GHz
dB
15
%
-
dBm
-
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP₃
Typ.
400
-2.0
200
30
30.0
16
45
45
Max.
600
-1.5
-
40
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL [phone] FAX [phone]
http://www.hw.com.tw All specifications are subject to change without notice.