HWF1682RA_V4_15 Datasheet, PDF (2/3 Pages) Hexawave, Inc – L-Band GaAs Power FET

Typical Performance at 25_°C
HWF1682RA
L-Band GaAs Power FET
January 2005 V4
Output Power, Efficiency & Gain vs. Input Power
V_DS=10V, I_DS=0.5I_DSS
f=2.4GHz
40
50
35
30
P_out
25
20
15
10
5
40
η
add
30
20
Gain
10
0
0
10 12 14 16 18 20 22 24 26 28 30
P_in (dBm)
Power Derating Curve
16
(25,15)
12
8
4
(175,0)
0
0
50
100
150
200
Case Temperature,T_C (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.
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