HWF1682RA_V4_15 Datasheet, PDF (1/3 Pages) Hexawave, Inc – L-Band GaAs Power FET

Features
• ^{High Output Power: P}1dB^{=37 dBm (typ.)}
• ^{High Gain: G}L^{=11.5 dB (typ.)}
• ^{High Efficiency: PAE =45% (typ.)}
• ^{High Linearity: IP}3^{=48 dBm(typ.)}
• ^{Class A or Class AB Operation}
• ^{Low Cost}
Description
The HWF1682RA is a high power GaAs
MESFET designed for various RF and
Microwave applications.
It is presently offered in a low cost,
surface-mountable ceramic package.
Absolute Maximum Ratings
HWF1682RA
L-Band GaAs Power FET
January 2006 V4
Outline Dimensions
RA Package (Ceramic)
V_DS[1] Drain to Source Voltage
+15V
V_GS
Gate to Source Voltage
-5V
I_D
Drain Current
I_DSS
I_G
Gate Current
10 mA
T_CH Channel Temperature
175_°C
T_STG
P_T^[2]
Storage Temperature
Power Dissipation
-65 to +175_°C
15 W
[1] Hexawave recommends that the quiescent
drain-source operating voltage (V_DS) should not
exceed 10 Volts.
[2] Mounted on an infinite heat sink.
Electrical Specification at 25_°C
Symbol
Parameters
Conditions
Units Min.
I_DSS Saturated Drain Current
V_DS=3V, V_GS=0V
mA 1500
V_P
Pinch-off Voltage
g_m
Transconductance
V_DS=3V, I_DS=100 mA
V_DS=3V, I_DS=1000 mA
V
-3.5
mS
-
R_th
Thermal Resistance
Channel to Case
°^C/W
-
P_1dB Output Power @1dB Gain
V_DS=10V
dBm 36.0
G_L
PAE
IP₃
Linear Power Gain
Power-added Efficiency (P_out = P_1dB)
Third-order Intercept Point^[3]
I_DS=0.5I_DSS
f=2.4 GHz
dB 10.5
%
-
dBm
-
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP₃
Typ.
2000
-2.0
1000
7
37.0
11.5
40
48
Max.
2600
-1.5
-
10
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan. TEL [phone] FAX [phone]
http://www.hw.com.tw All specifications are subject to change without notice.