HWF1681RA_V3_15 Datasheet, PDF (2/3 Pages) Hexawave, Inc – L-Band GaAs Power FET

HWF1681RA
L-Band GaAs Power FET
June 2005 V3
Output Power, Efficiency & Gain vs. Input Power
V_DS=10V, I_DS=0.5I_DSS
40
35
30
25
20
15
10
5
0
5
f=2.4GHz
50
40
η
add
P_out
30
Gain
20
η
10
add
0
7 9 11 13 15 17 19 21 23 25
PP_inin((ddBBmm))
Power Derating Curve
16
(25,12.0)
12
8
4
(175,0)
0
0
50
100
150
200
Case Temperature,T_C (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.
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