HWF1681RA_V3_15 Datasheet, PDF (1/3 Pages) Hexawave, Inc – L-Band GaAs Power FET

Features
• ^{High Output Power: P1dB=34.5 dBm (typ.)}
• ^{High Gain: GL=15 Db (typ.)}
• ^{High Efficiency: PAE =43% (typ.)}
• ^{High Linearity: IP3=48 dBm (typ.)}
• ^{Class A or Class AB Operation}
• ^{Low Cost}
Description
The HWF1681RA is a high power GaAs MESFET designed
for various RF and Microwave applications. It is presently
offered in a low cost, surface-mountable ceramic package.
HWF1681RA
L-Band GaAs Power FET
June 2005 V3
Outline Dimensions
Absolute Maximum Ratings
[1]
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
ID
Drain Current
+15V
-5V
IDSS
IG
Gate Current
6 mA
TCH
Channel Temperature
° ^{175 C}
TSTG
[2]
PT
Storage Temperature
Power Dissipation
° ^{-65 to +175 C}
12 W
[1] Hexawave recommends that the quiescent drain-source
operating voltage (VDS) should not exceed 10 Volts.
[2] Mounted on an infinite heat sink.
RA Package (Ceramic)
Symbol
Parameters
I_DSS Saturated Drain Current
V_P
Pinch-off Voltage
g_m
Transconductance
R_th
Thermal Resistance
P_1dB Output Power @1 dB Gain
G_L
Linear Power Gain
PAE _{Power-added Efficiency (Pout = P1dB)}
IP₃
Third-order Intercept Point^[3]
Electrical Specifications at 25_°
Conditions
V_DS=3V, V_GS=0V
V_DS=3V, I_DS=60 mA
V_DS=3V, I_DS=600 mA
Channel to Case
V_DS=10V
I_DS=0.5I_DSS
f=2.4 GHz
Units
mA
V
mS
°^C/W
dBm
dB
%
dBm
Min.
900
-3.5
-
-
33.5
14
-
-
Typ.
1200
-2.0
600
9
34.5
15
43
48
Max.
1600
-1.5
-
12
-
-
-
-
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP₃
Hexawave Inc. 2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL [phone] FAX [phone]
http://www.hw.com.tw All specifications are subject to change without notice.