HVV1011-300 Datasheet, PDF (5/5 Pages) HVVi Semiconductors, Inc. – L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications

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HVV1011-300 High Voltage, High Ruggedness
HVV1011-300 High ^TV^M oltage, High Ruggedness
L-Band Avionics Pulsed Power Transistor
L-Band Avionics Pulsed Powe₁r₀₃T₀r_/a₁n₀₉si₀s_Mto_Hr_{z, 50µs Pulse, 5% Duty}
1030/1090 MHz, 50µs Pulse,_F5_o%_{r TC}D_Au_St_,y_{IFF and Mode-S Applications}
For TCAS, IFF and Mode-S Applications
PACKAGE DIMENSIONS
PACKAGE DIMENSIONS
DRAIN
GATE
SOURCE
Note: Drawing is not actual size.
Note: Drawing is not actual size.
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express or implied, as to the accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. Use of HVVi products as critical components in
life support systems is not authorized. No licenses, either express or implied, are conveyed under
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dotrcaudmeemntaartkasnoyf tHimVeViaSnedmwiicthoonudtuncottoicres., ITnhc.is document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, HVVi does not give any representations or warranties, either express or implied, as to
the accuracy or completeness of such information and shall have no liability for the consequences of use
of such information. Use of HVVi products as critical components in life support systems is not
authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property
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Inc.
HVVi Semiconductors, Inc.
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EG-01-DS02A
12/11/08
EG-01-DS02A⁵
12/12/08
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