HVV1011-300 Datasheet, PDF (2/5 Pages) HVVi Semiconductors, Inc. – L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications

H^H_L-V^V_BV^V_an1¹_d0⁰1¹_A1¹_v-^-_i3³_o0⁰_n0⁰_icH^H_{s P}iⁱg^g_uh^h_l^T_s^hV^V_e^e_do^oinl^l_Pt^tna^a_o^og^g_w^ve^ea_e,^,t_rⁱH^Hv_T^eiⁱ_r^Sg^g_a^eh^hm_nsR^Ric_is^ou^u_tⁿg_o^gdg_r^gue^ecd^dton^nre^eCs^sos^smpany!
L₁₀-B₃a₀n_/1d₀A₉₀vi_Mon_Hic_zs_, P₅₀u_µls_sed_PuP_lo_sew_,eH₅rV_%TVr1_Da0n_u1s_t1_yis-3to0r0 High Voltage, High Ruggedness
1_F0_o3_r0_T/1_C0_A9_S0_, M_IFH_Fz_a, _n5_d0µ_Ms^TM_oP_du_el_-s_Se,_AL5_-pB%_palniD_cdau_Att_viy_{oionnsics Pulsed Power Transistor}
For TCAS, IFF and Mode-S A₁p₀₃p₀li_/c₁a₀₉ti₀o_Mns_{Hz, 50µs Pulse, 5% Duty}
For TCAS, IFF and Mode-S Applications
E^E_ELL^L_EE^E_CC^C_TT^T_RR^R_ICI^IC^C_ALA^AL^L_CHC^C_AH^H_RA^A_AR^R_CA^A_TEC^C_RT^T_IE^E_STR^R_II^I_CS^S_ST^TI^IC^CS^S
Symbol Parameter
Conditions
SVSy_By_Rm₍m_Db_So_Sb₎lol PPDaarrraainmm-eSetoteuerrrce Breakdown CCVooGnnSdd=iitt0ioVnn,IssD=5mA
VI_{VDBBSRRS((DDSS) D}D_rara_inin_--_SLS_oeo_uauk_rr_cac_ege_BCre_eua_arkr_ked_dno_otw_wn_{n VG}V_SG₌S=_0V0_,V_I,_DIVD₌D=₅S5_m=m5_AA0V
IIG^IDGGD_P^SSS1SSS
GI^IR^G_P^SL^1S1
Iη^GR_D^PL¹¹¹
ηV^IR_DG^1LS¹(Q)²
V^ηGT^D1HS(Q)²
D^DGra^raai^tn^ienL^LLe^eeaa^akk^kaa^agg^gee^{e CC}C^uuu^rrrr^rer^eeⁿⁿn^ttt
GPoawteerLeGaakiange Current
G_PIa_not_pwe_uetL_re_RGa_eak_tiua_nrg_ne_LC_osu_srrent
P_IDo_nw_rpae_uinr_{t R}G_Eefa_ftii_ucn_irenncLyoss
In_DGp_raau_tiet_nR_QEe_ufft_iieu_csir_ecn_nencL_ytos_Vs_oltage
D_GTr_ha_ri_tn_esQE_hf_ouf_li_dec_si_Ve_cn_oelnc_ty_tagVeoltage
VG^VS^G=^S=0V⁰⁵,^VV^,VD^DS^S=⁼5⁵⁰0^0VV^V
VF=G1S0=950VM,VHDzS=0V
VG_F=S=₁₀5₉V₀,V_MD_HS_z =0V
F=_F1₌0₁9₀0₉₀M_MH_Hz_z
F=_FV1_=D0_1D9₀₌0₉₅₀M_0MH_VHz_,IzDQ=100mA
F=_V1_D0_D9₌0₅M_0VH_{V, ,}z_{IIDD=Q3=0100µ0AmA}
V^VT^GH^{S(Q)2 G}T^ah^tr^ees^Qh^uoⁱl^ed^sV^co^elⁿta^tg^Ve^{oltage VD}V^DD⁼=⁵⁰5V^V,II^DD^Q=⁼30¹0⁰µ⁰A^mA
VTH
Threshold Voltage
VDD=5V, ID=300µA
Min
95
-
-
16
-
43
1.1
0.7
Min
Typical
MT9iyn5pical Ty1Mp0iac2axl
9-5₁₀₂ 15002 _-
- ₅₀
1- 6
1-6 ¹
4-8 ¹⁸
14.81^-12
510₂₀₀
11 8
-1182 ⁵
5-01.25 ^-
510.4.5^-8
10.17⁴⁵ 11.4.25 ^-
0.7^1.45 1.2^1.8
1.2
1.7
Max Unit
MUa-nx it UnVit
20- 0 V µVA
2050_µA µA
5-
µdAB
--8 ^µA dB
--8 ^dB d%B
1-.8 ^dB %V
1.87 ^% V
1.7 ^V V
V
P^PPU^UuL^LlS^SsE^Ee CC^CHH^HAA^ARR^RAA^ACC^CTET^TRE^EIR^RSTI^IS^SICT^TSI^IC^CS^S
S^StS_ry^1yym^mmb^bo^obl^lol
t^T_rf¹r¹
tPT_f1D_f¹¹
P_PD_D¹1
Pa_PRPr_a^aa_isr^rm_ea^a_m^mTe_ie^et_me_t^t_e^eer_r^r
Ris_RFe_aislT_el i_Tm_Timie_mee
FalF_Pl a_uTl_lli_smT_eiem_Dre_oop
Pul^Ps^ue^lsD^er^Do^ro^op^op
Co_CFCn_=o^od_nⁿ¹_d^di₀t_iⁱ⁹i_t^to_iⁱ⁰_o^on_Mnⁿs_s^sHz
F=_F1₌0₁9₀0₉M₀H_Mz_Hz
F=F1=019009M0HMzHz
F=^F1⁼0¹9⁰0⁹M⁰H^Mz^Hz
THERMAL PERFORMANCE
T_TH_hE_eR_rM_mA_aL_{l P}P_EE_RR_FF_OO_RR_MM_ANA_CN_ECE
Symbol Parameter
Max
S_θJy_Cm₁ bol
Parameter
Thermal Resistance
θ_JC1
Thermal Resistance
Max
0.20
0.20
Unit
Unit
°C/W
°C/W
RUGGEDNESS PERFORMANCE
RU_RG_UG_GE_GD_EN_DE_NES_SS_SP_PE_ER_RF_FO_ORR_MM_AA_NN_CC_EE
Min_M^M_i^i-_nⁿ Typica_T^T_yl^y<_p^p3_iⁱ_c^c5M_a^a_la^l x
- _- <35 _<315 50
- - <15 <₀1_.35 50
- ^- 0.3 ^0.3 0.5
M^M5Ua^a0x^xnit
Units
UnSits
50 ^nS nS
05.05 ^nS ndSB
0.5 _dB dB
Symbol Parameter Test Condition
Max Units
SLMymT¹bol PLaoraadmeter TFe=st1C0o9n0diMtiHonz
M20a:x1 UVnSiWtsR
LMT¹
LMoiasmd atch F = 1090 MHz
20:1 VSWR
MToislemrantcche
The HVV^T1^o0^le1^ra1^nc-^e300 device is capable of withstanding an output load mismatch
T_c^h_oh^e_re_r^H_e^VH_s^V_pV¹_o⁰V¹_n1¹_d^-0³_in1⁰⁰_g1^d-_t3^e_o^v0^ic_a0^e₂^isd₀^ce_:^av₁^pi^ac_V^be^l_S^e _W^ois^f _R^wic^t_aa^h_t^sp^t_r^aa_aⁿb_t^dl_eⁱeⁿ_d^go_o^anf_ut^ow_p^u_u^ti^pt_th^ut_ps^lt_o^oa_w^an^d_ed^m_rin^is_ag^m_n^a_d^ta^c_nn^h_o^c_m^oo^ru^r_i^e_nt^sp_a^pu_l^ont_o^d_pⁱlⁿ_eo^g_ra_a^td^o_ti^a_nm²_g⁰i^:_vs¹m_o^V_l^S_ta^W_at_gc^Rh_e
c_aato_crr_rar_ote_sds_spo_tou_htnp_edu_fitn_rp_ego_qwt_uoe_er _naan_c2d_y0n_b:o_a1m_niVn_daSl_oWo_fpR_oer_paat_etin_rr_aga_tv_ito_oel_ntda_.goeuatcprousts tphoewfreeqruaenncdy bnaonmd oinf oapl eorapteiorna.ting voltage
across the frequency band of operation.
1_{NOTE: : All parameters measured under pulsed conditions at 275W output power measured at the 10%}
pb_2N1ma^1ma2_aoOn.nn..i₎₎₎n_eeTdddt_{aNaNENmossVV:O}^Of_OuAuaDDT^Tt_rtmrTh_DDceEeEe_Ehodd:^:_=e=u:p_A^A_daanu55Alt^lt_tltl0^l0seo_ttme_pV^pV_hhsfta^aw_,oe,egfr^r_IIuaiiDa1Da1txt_nh_m0^m_t0eQQut%%pv_e^e_ru=o=eot^tl_p.ple^es_ft11roe^ro_a00s^s_ggiiw_0n0neam^m_mi_mttd_treeoe^eot_AAhq_a^a_{ff uvs}^s_i=_titnnhhiou^u_r5eeelr^r_aa0_ted^eaµ_{ppbdbdgtsuuorr}e_eu^u_ololc_sasnⁿ_aa,t_eerd_dtd^dde_auwweb^ebq_itnr^r_aaiiuy_ttnpnn^p_hhic_roduduy_eppmcl^ld_msmsl_uuei_e^e_nllaass=_td^d_atoteelc5_cc^c_qh%_hwwo^oa_{ueeintiniaddddted}n^da_stttd_hitihcⁱ_tne^te_eiⁱV_{s=os=onDtttnn}ⁿ₅₅Dc_ffos^s_00iiuxxm=_µµar^a_ttrsst5_u^tui_enee0_2r^2r_naecV_ec7⁷_tl..,,_.,5⁵I_ddWD^Wq_uuQ_utto^oi_yy=_eu^us_c1_ct^tc_p0_y^pye0_cucum_nllt^t_eetpA^p_==o^ocin_w^w_55ua_%%re^erb_r^rer_no_ta_.d-
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
HV^HVV^Vi ⁱS^Se^em^micⁱo^cn^odⁿu^dc^uto^cr^ts^o, ^rI^sn^,c^I.^nc.
H10V¹2⁰V3²5i³SS⁵e.^Sm5^.1i⁵c^s1to^sSn^ttd.^SuS^tc^.ut^Soi^utreⁱs^t,1^eI0n¹0c⁰.⁰
1P0h^P2o^h3e^o5n^eiSxⁿ.,^ix5A^,1z^As.^tZS8^.5t⁸.0⁵S4⁰u4⁴it⁴e 100
Phoenix, Az. 85044
© 2_©^T_T^T0e_e0^e2l_l^:l8_0:^:(8₀₍⁽H₈⁶⁸V₆⁶⁶_HV₆⁶⁾ _V)i^)4S₄^24Ve₂^I29S_im₉^9-IIO_S^H_-^-SSi_H^HecV^OO9_mo_V^VV0n⁹⁹ⁱⁱ_V^V0_c⁰d⁰⁽_o¹⁴_iⁱ⁰⁰u_n^:8₍⁽¹¹²c_4d4^8::t⁰²⁸_u28^4o008_c08^)r_t⁰⁰⁴⁰⁴so_o,^0)0)rCrI_son^oCCve_,r^rci^re_Ie^s._v^vt_n^rrAiⁱ_i^ttitcf_si^silⁱ_.^wffl_i^ieititAR^eedw_w^wdi^dlg_l^w_w^wh_R^._w^wht_is_g^v_.^._h^hR_h^v_v^vi_te._sv^vcs_i^io_Re_.^._c^crm_ev_o^ose_m^med_rv. _ed.
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
E_EEG_GG-0_--10012₁₁-₁D_-/-D1D2S1_/SS0_1/02₀₂₀₂₂A_/80AA8
12/12/²082
2