HVV0912-150 Datasheet, PDF (5/5 Pages) HVVi Semiconductors, Inc. – L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications

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HVV0912-150 High Voltage, High Ruggedness
TM
HVV0912-150 High Voltage,^L9-6H^B0ai_-g^n1d2h_1AR_5vMiu^oHng^izg^c,se₁d^P0un_μlsse^ePs^dus_{lPsoew, 1e0r%TrDanustiystCoyrcle}
UHF Pulsed Power Transistor_{For Ground and Air DME, TCAS and IFF Applications}
960-1215 MHz, 10µs Pulse, 10% Duty Cycle
For _PG_Ar_Co_Ku_An_Gd_Ea_Dn_Id_MA_Ei_Nr_SD_IOM_NE_S, TCAS and IFF Applications
%_PD_Au_Ct_Ky_{AGE DIMENSIONS}
DRAIN
GATE
SOURCE
Note: Drawing is not^Na^oc^tt^eu^:a^Dl s^raiz^weⁱ.^{ng is not actual size.}
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HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, HVVi does not give any representations or warranties, either express or implied, as to
the accuracy or completeness of such information and shall have no liability for the consequences of use
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