HVV0912-150 Datasheet, PDF (2/5 Pages) HVVi Semiconductors, Inc. – L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications

H_U9F%^H_U9F%66ooHHVV_00DrDrFFV_-^V_-GGuu1100_tPtP22rryy99_1o1ouu11_5u5ullss22_nneMeM--_ddd1_d¹_HH55_aaPP00_nznzoo,,ddHH_ww11AA0e0i_e^igg_{iriµrµrr}hh_ssTT^T_DD^hV_r^V_rPTPM ^e_aMaMuuoo_nⁱ_nⁿ_llll_EEssssttⁿ_ia_ie^a_,e,^o_ss,,gg_TTt^v_too11ee^a_CCL9FHr,_r0^,₀^t-o6_Aⁱ_AVBH_%^Hv_%r0aS^e_SVG-ii_n1Sg₀^g_DrDaad2eo9hh_{nn1muuuA15ddntt}R_v^R₂ⁱ_yy^cMdi_I-Ioouu_1FFCCaHnngg_5nFiFzdyycgg_0d,uccse₁^e_AAH^c_lAlPd₀^d_ee^t_pupii^oμrnn_glpp^rsDsee_hleClPMis_i^s_douccs_V^s_{EmlaPaso,otet}^pT_{iilw,oCaot1eAnnna0rySss%gT!areDan,nduHstIiyiFsgFtCohyArcpRlepuligcagtieodnsness}
EE_ELLL_EEE_CCC_TTT_RRR_ICIICC_ALAALL_CHCC_AHH_RAA_ARR_CAA_TECC_RTT_IEE_STRR_III_CSS_STTIICCSS
Symbol
S_VSy_By_Rm₍m_Db_So_Sb₎lol
V_{IVDBBSRRS((DDSS)}
IIGI_{ηIGIηVIIGIRDGRGDGRDDGPPSSPSSSL1L111L1SSSSSS111(Q)2}
V_V^ηG_T^D1_HS(Q)²
V^VT^GH^S(Q)2
VTH
Parameter
PP_Daa_rrr_aa_inmm_-e_Set_ote_uer_rr_{ce Breakdown}
D^D_Dra^r_r^a_ainⁱ_iⁿ_n-^-S_L^So_e^ou_a^u_kr^rc_a^ce_geB_C^ree_u^aa_r^k_rk_e^dd_n^oo_t^wwⁿn
DG^DGPGPIra_nooa^raa_tp^aw_weit^tn_uei^e_enetLrrL_L^L_e^L_Ree^e_GG^e_aea^aa_aaaktk^kk_iu^k_iananaa^a_rgg^gng^g_ee^ee^e_LCC^CoCC_u^us_u^uu_sr^r_r^rrrrr^reere^ee_nⁿ_nⁿn_t^t_t^tt
P_Io_Dnw_rpae_uinr_{t R}G_Eefa_ftii_cun_irenncLyoss
In_DGp_raau_tiet_nR_QEe_ufft_iieu_csir_ecn_necnL_ytos_Vs_oltage
D_GTr_ha_ri_tn_eesE_Qhf_ouf_li_dec_sie_Vcn_oelnc_ty_tagVeoltage
G_Ta_ht_re_esQ_hu_oi_le_ds_Vc_oe_ln_tat _gV_eoltage
Threshold Voltage
Conditions
CC_Voo_Gnn_Sdd₌iitt₀iio_Vnn_,Iss_D=5mA
VG^V_VS^G_G=^S_S⁼₌0V⁰₀,^V_VI^,_,D^I_V^D=_D⁼5_S⁵m₌^m₅A^A_0V
VVGG^VVFVFF₌SS₌₌^GGG==₁₁₁^SSS₂₂₂⁼⁼⁼05₁₁₁VV⁰⁵⁵₅₅₅,,^VVVVV_MMM^,,,VVDD^V_HHH^DDDSS_zzz^SSS==⁼⁼⁼50⁵⁰⁰0V^0VVV^V
F=_FF1₌₌2₁₁1₂₂5₁₁₅M_5MMH_HHz_zz
F=_FV1_=D2_1D1₂₌5₁₅₅M_0MH_VHz_,IzDQ=50mA
F=_VV1_DD2_DD1₌₌5₅₅M_0VH_{V, ,}z_{IIDD=Q3=0500µmAA}
VD_VD_D=₌50_5V,I_ID_DQ₌=₃₀5₀0_µm_AA
VDD=5V, ID=300μA
Min
95
-
-
18
-
41
1.1
0.7
Min
Typical
MT₉iyn₅pical Ty₁Mp₀iac₂axl
9_-5₁₀₂ 1₅0₀2 _-
-_-
1^- 8
1_-8
50
1
4^-1 ²⁰
1⁴.¹1^-5
1₀._.1₇⁴³
0.7^1.45
52_2-11500₀₂₅₀₀
4^-53 ^-
1⁴.4^3-5^3.5
1₁.4_.25
1.2^1.8
1.2
1.7
Max
MUa_- nx it
20^- 0 ^V
-²3^505--.05^μμAA
-3_-.5^dB
1^-.8 ^dB
1₁._.8₇ ^%
1.7 ^V
V
Unit
Un_Vit
µ^V A
µ_µA_A
µ_dA_B
d_dB_B
d_%B
%_V
V_V
V
PPPUUuLLlSSsEEe CCCHHHAAARRRAAACCCTETTREEIRRSTIISSICTTSIICCSS
Stt^SttP_TT^S_rfrf1Dy₁₁^y1_rf1^y₁m^m₁^mb^bo^obl^lol
P_PD_D¹1
R^Pi^as^PRPRFre^a_aai^ai_s^sr_lT^rm_ele^aai_Tm ^mm_T^Te_imi^ieee^t_m^metteee_e^errr
FalF_Pl a_uTl_lli_smT_eiem_Dre_oop
Pul^Ps^ue^lsD^er^Do^ro^op^op
F^C=^oCFCFF1ⁿ₌^==oo2^dnn₁¹¹1^ddi₂₂₂5^tii₁₁₁^ittM^oii₅₅₅^oonH_M^MMnnsz^sHsHH_z^zz
F=F_F1=₌21₁12₂51₁M5₅HM_MzH_Hz_z
F=^F1⁼2¹1²5¹M⁵H^Mz^Hz
TT_THH_hEE_eRR_rMM_mAA_aLL_{l P}PP_EEE_RRR_FFF_OOO_RR_M^RMM_ANAA_CNN_ECCEE
Symbol
Symbol
θ^θ_J^J_C^C11
Parameter
Parameter
Thermal Resistance
Thermal Resistance
Max
Max
0.13
0.13
Unit
Unit
°C/W
°C/W
RRUU_RGG_UGG_GEE_GDD_ENN_DE_N^E_ESS_SSS_SPP_PEE_ERR_RFF_FOO_ORRR_MMM_AAA_NNN_CCC_EEE
Min_-M^M_i-^i--_nⁿ Ty_<p₁ic₇a_T^T_yl^y_<<<p^p_112iⁱ_c7^c77M_a^a_la^l ₅x₀
- -_- <27 ₀<_.2₂7₅ 50
- ^- 0.25 ^0.25 0.5
M^M5Ua^a0x^xnit
5₅0₀
nS
Units
U_nn_Sits
n_nS_S
0⁵.⁰5 ^{nS n}d^SB
0.5 _dB dB
Symbol Parameter Test Condition
Max Units
S_LMym_T¹bol P_La_or_aa_dmeter T_Fe₌st₁C₂o₁n₅di_Mti_Hon_z
M₂₀a_:x₁ U_Vn_Si_Wts_R
LMT¹
L_Mo_ia_smd _atch F = 1215 MHz
20:1 VSWR
M_Tois_lem_rantc_ch_e
Tolerance
The HVV0912-150 device is capable of withstanding an output load mismatch
T_c^h_oh^e_re_r^H_e^VH_s^V_pV⁰_o⁹V¹_n0²_d^-9¹_in1⁵⁰_g2^d-_t1^e_o^v5ⁱ_a^c0^e ₂^isd₀^ce_:^av₁^pi^ac_V^be^l_S^e _W^ois^f _R^wic^t_aa^h_t^sp^t_r^aa_aⁿb_t^dl_eⁱeⁿ_d^g o_o^anf_ut^ow_p^u_u^ti^pt_th^u_p^ts^l_ot^oa_w^an^d_ed^m_rin^is_ag^m_n^a_d^ta^c_nn^h_o^co_mo^ru^r_i^e_nt^sp_a^pu_l^ont_o^d_pⁱlⁿ_eo^g_ra_a^td^o_ti^a_nm²_g⁰i^:s_v¹m_o^V_l^S_ta^W_at_gc^Rh_e
c_aato_crr_rar_ote_sds_spo_tou_htnp_edu_fitn_rp_ego_qwt_uoe_er _naan_c2d_y0n_b:o_a1m_niVn_daSl_oWo_fpR_oer_paa_ettin_rarga_tv_ito_oel_ntda_.goeuatcprousts tphoewfreeqruaenncdy bnaonmd oinf oapl eorapteiorna.ting voltage
across the frequency band of operation.
1_{NOTE: All parameters measured under pulsed conditions at 150W output power measured at the 10%}
pb_{2N1ma21ma2aoO.n.n}^.n.i₎₎₎₎n_eeTdddt_{aNaNENNmossVV:OOO}f_OAuuaDDTTttm_rrTTh_DDceEeEEe_{Ehodd::=e=u::}p_{AAdaanu55AAltlttltl0l0}seo_tmtme_pVpVhhsftaw^ao,oe,e_{gfrrIuIuaiiD1aD1a}txt_nnh_0mt0meQQutt%p_%ver^eu_=o=eoottl_p.pleefs_ft55orea_or00ssgggiiw_mmnneaammi_ttd_ttArAeeoeeoethq_{aafifinnvuvss}=_{tthhioouuaar1eeellrr}0_ttbbed^eaapμ_{prdrdggtsuouooeeeuulala}c_sasnndd,t_eerrdt_{ddbbeeauwweeaaqqitnrrnniuiu}y_ttpdn^pdhihic_rrouuy_{eemmppmcllddss}l_uuaaei_eenlltts=_{sttddcacooeelhh}1_{ccq0eewwoaoau%ddtintinidtdetdtadt}a_astteen_{ihiichintsntsediit=to=n}^oV_nftnfnn1i1D_{icxoxoss00uDttmmµµaur}^au=r_{ssttririenneeee}5_11naa..c0_c55tll.V,,00,_ddWWqqI_uD_uuuttQ_ooiiyyeeuu=_ssccttccp5_ypyee0_cucunm_nlltteettpA^p==ooccin_wwu1u1a_00rreerr%%b_rreer_nno_tta_..d-
HVVi Semiconductors, Inc.
H1H1P00hVV^1P_22o^0hVV33e^2o_5n5ii^3e_iSSSSx⁵ⁿee.,._iSmm_x5A5^.,_11i^5iz_Acc_ss.¹_tto_Z^o8Ss_Snn.t5tt8dd..0^S5uuSS^t_4c0^c._uu4t^St_4ioiot^u_t4reres^ist,1,1^eI0I0nn¹_00cc⁰..⁰
Phoenix, Az. 85044
ISO 9001:2000 Certified
© 2_©^T_TT0e_e0^e2l:_ll8_0::⁽⁸₀₍H⁽⁸⁸⁶⁸V₆^66HV₆₆⁾ _V)i^)4S₄^24Ve₂⁹²ⁱm₉₉^-IISH_-S-Si_HHecV^OOmo_VV^Vn99ii_VVc0d⁰⁽_o⁴_ii00u_n⁸₍₍₁₁c_4d4^8::t_82u82^4o08c08)r_t0404so_o,^0)0)rrI_sn_ooCC^v_,rrci^eIes._vvnrrAi_i^ttitcsisil_.^wffl_iiititAR^eew_wwdi^dlg_l^w_wwh_R^._ww^ht_is_g^v_..hhR_h^v_vvt^ie._svv^cs_ii^o_Re_..ccrm_ev_oose_mmed_rv. _ed.
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11A
EEGG--00¹11²--11^/DD¹_22S/S¹_/111^/122011//₂₈A0A0882
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