HVV0405-175 Datasheet, PDF (2/5 Pages) HVVi Semiconductors, Inc. – UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications

HVV0405-175 HighThVe ionlntaovgaet,ivHe SigehmiRcoungdgucetdonr Ceossmpany!
H_UHV_FV0_P4_u0_ls5_e-_d17_P5_oH_weig_rh_TV_rao_nl_st_ia_sg_toe_r, High Ruggedness
U40H0F-5P00ulMseHd _zP, o3w00erµsTrPaunlsies,to1^Hr0^V_%^V0_D⁴⁰_u⁵_ty^-1_C⁷_y⁵_c^H_le^{igh Voltage, High Ruggedness}
4F0o0r-U50H0FMbHanz,d3, 0W0eµast^T_h^MPeurlsaen,d1U_L0H%oF_nP_gDuls_RuetadynPCgo_eywcRelreaT_dra_an_rsi_Ast_po_pr_lications
For UHF band, Weather and⁴L⁰⁰o^-n⁵g⁰⁰R^Ma^Hn^zg^,e³⁰R⁰a^μd^s a^Pur^lsA^ep^{, 1}p⁰li^%ca^Dt^uio^tyn^Cs^ycle
For UHF band, Weather and Long Range Radar Applications
%%^EESEDD^LLyLmuu^EEEbtt^CCCoyy^{lTTTRRRIIICPCCAaAArLamLLCeCCHteAHHr RAAARRCAATCCERTTIEESRRTIIISSCSTTCoIICCndSSitions}
Min
Typical
Max Unit
S_SV_yBy_Rmm_(DbSb_oS)o_l l
VIIGI_{ηVIIGIηV}^IIGI_{ηVVDGRDRRDG}DGBP_{DDSSGGTBPP1RL1SS}SS_SSLLR1111H(_SSSS_SS1(D_11DS_((SS_QQS) ₎₎₎₂₂
V_VG_TS_H(Q)²
VTH
Pa_PD_arra_raimn_m-eS_et_to_eeu_rrrce Breakdown
Dr_D^Da_r^ri_a^an_iⁱ-_nⁿS_-^L_So^eu_o^a_ur^kc_r^a_ce^g_eB^e_Br^C_re_e^ua_a^rk_k^rd^e_dⁿo_o^tw_wnn
DGPInora^DGPIDGPIDG_pawnntoo^rr_ra^aa_ueipp^aa_aewwn_tt^t_tuue^ee_iiⁱ_rLeeⁿⁿ_nttLRe_rrGQL^Le_RREE^L_eae^e_GGuaa^ef_fteeka^a_ffiuaai^ak_ttiiek^k_naccuuii^k_rasnna^a_giinrr^ae_eg_cg^g_nne^gn_nee_e^e_L^e_nccLLCoyyC_C^Ct_oo^C_suu^u_ssu_Vs^u_rssr^rr_or^rrrre_l^reee_t^e_nanⁿnⁿ_tgt^tt_e
Dr_GTah_airn_te_esE_Qhffo_uilc_id_eie_sV_cno_ecl_nyta_t g_Ve_oltage
Ga_Tt_he_reQ_shu_oie_ldsc_Ve_on_ltt_aV_go_eltage
Threshold Voltage
Co_CVnG_od_nSi_d=t_ii_t0o_ioVn_n,sI_sD=5mA
VG_V^VS_G^G=_S^S0₌⁼V₀⁰,I_V^VD_,^,_I^V=_D^D5₌^Sm₅⁼_mA⁴⁸_A^V
VVFF==GG^VVFFFVFFFV_44SS======^GGGD_55==444444D^SSS_0005555555⁼⁼⁼⁼_MMVV000000⁰⁵⁵⁵,,HH_MMMMMMVV_V^V0_zzHHHHHH^,,,DD_V^VVV_zzzzzz,SS^DDDID==^SSSQ40⁼⁼⁼⁼8V⁴⁰⁰V₅^8VV0V_mA
F=_VV4_DD5_DD0₌=M₅5H₀Vz_V, _,I_ID_D=_Q3₌0₅0₀µ_mA_A
VD_VD_D=_D5₌0₅V_V,I_,D_IDQ₌=₃5₀0₀m_µAA
VDD=5V, ID=300μA
Min
95
-
-
23
-
52
1.1
0.7
T_My9p_in5ical
9^1-5⁰²
1^{252552-----.-32321}1⁷⁰⁵
1⁰⁵.^.1⁷⁵
0¹.^.7⁴⁵
1.2
M_Ty1a_p0x_i2_cal
1⁵0^0-2
1^252525--.11-4⁷⁷₅^50555-45⁰
1¹.^.4^-25
1¹.^.2⁸
1.7
Un_Mi-_at_x
2_V0_- 0
μμdd²_1--BB5⁵AA^0--_--.448⁰
% ₁1_..₈7
1^V.7
V
U^Vnit
µ_VA
µ^µA^A
µ^dBA
d^dB^B
d^%B
%^V
V^V
V
PULSE CHARACTERISTICS
PU^PL^uS^lE^seC^CH^HA^AR^RA^AC^CT^TEE^RR^II^SS^TT^ICIC^SS
TT^SSttSttP_rfrf^rf_D1¹₁^yy₁^1ymm₁^{mbbboooll l}
PPDD¹¹
R^Pi^as^re^PRPRFa_a^aa_iⁱT_s^sm_l^rrl_e^ei^aam_T^emm_T^Tie^t_mi^iee_m^metteree_e^err
Fall_FPT_aui_llm_lse_Te_imDr_eoop
PulsPeulDseroDorpoop
F^C=^o4^CFCFFn5₌^==ood0ⁿⁿ₄⁴⁴ⁱM^ddt₅₅⁵ⁱⁱⁱ₀^00oH^ttiiM_M^Mnooz^nnH_H^Hsssz_z^z
F=4_FF5₌=0₄4M₅5₀0H_MMz_HH_zz
F=4F5=04M50HMzHz
THERMAL PERFORMANCE
TH_TE_hR_eM_rA_mL_alP_CE_HR_AF_RO_AR_CM_TEA_RN_IC_STE_ICS
Symbol Parameter
Max
Unit
M_M^Min_-iⁱ_---nⁿ
-_--
--
Ty_<p_2T^Tic_y^y_5<<<a_p^p₂₂₂l_iⁱ_c^c2_55a^a_l^lMa₅x₀
M^M₅⁵⁵a^a₀⁰⁰x^xUn_nⁱ_S^t
Units
Uⁿn^Sits
nⁿS^S
<22_<0₂.3₂ 50 0₅.₀5 nS _nd_SB
0.30.3 0.5 0.5 dB dB
S_θJy_Cm¹ bol P_Ta_hr_ea_rm_me_at_le_Rr_esistance M_0.a₄x₀
U_°Cn_/it_W
θ_JC1
Thermal Resistance 0.40
°C/W
RUGGEDNESS PERFORMANCE
RU_RG_UG_GGE_ED_DN_NE_ES_SS_SP_PE_ERR_FF_OO_RR_MM_AA_NN_CC_E E
Symbol Parameter Test Condition
Max Units
LMT¹
Symbol
LMT¹
Load
P_Ma_isra_mm_ate_ct_her
L_To_oa_led_rance
Mismatch
F = 450 MHz
Test Condition
F = 450 MHz
20:1
Max
20:1
VSWR
Units
VSWR
The HVV0^T4^o0^ler5^a-ⁿ1^ce75 device is capable of withstanding an output load mismatch
c_T^To_h^hr_e^ere^Hs^V_Hp^V_V⁰o_V⁴n⁰₀d⁵₄^-in¹₀⁷g₅⁵_-^dt₁o^e₇^vaⁱ₅^ce2ⁱ_d^s0_e^c:^a_v1^p_i^a_cV^b_eS^leW^o_is^fR^w_cⁱa^t_a^ht^s_p^tr_a^aaⁿ_bt^d_le_eⁱⁿd^g_o^an_fu^otp_w^uu^t_i^p_tt^u_h^tp_s^l_to^o_a^aw_n^de_d^mr_in^isa^m_gn^ad^t_a^chno^com_o^rr_u^ein_t^sp_pa^o_ul ⁿ_to^dpⁱⁿ_le_o^gr_a^ta^o_dt^ain²_mg^0:_i¹v_s^V_mo^Slt^W_aa_t^Rg_che
c^aao^ctrror^ae^tses^dp^too^hun^etpd^ufin^rtepg^qowt^uo^erna^acny2^d0^bn:^oa1^mnidVⁿS^aolW^fopoR^epraa^ett^rinar^gta^ivot^oe^nltd^.ago^eu^at^cp^rou^sst ^tp^heow^free^qr^ueaⁿn^cd^{y b}n^ao^ndm^oi^fn^oa^pl^eo^rap^tie^onra^. ting voltage
across the frequency band of operation.
1m1maa2^1ma₂..nn.^NN)))_nee^e_dd^OOd_aaNN^a_N^TT_ssVVVsOO^EEu_uuODDDTT^::r_rrDT^AAe_DDeeEE^d_E^lm_dd=::^l_==:^apoAA_5aa^ta_55u0llttA^trll00_{nVhattmppVVthh,meIo}aa,,ee_Do^1efrrII^0Q_u^t_{DD11aage%n00mmaQQ=r%%tst}^peee_5m==^ott_0voppee^iem_55onfoorr^al_00ss^tAt_ii^s_mmanng^oumm_{igfttanrAAeettooeeahe}^draaffii^eeb_nn^usstt_qrphhvⁿuu_oaauuoee^drr_ailbbeerl^eds_{ppteerrrddabduuoo}^p_g^wauullaa_tunsseoinndd^tld_ee^shaddbb^em_rtwwee^p_aa^d_etrr_aaunniiq^c_tttilppdd^on_hhu^scenhuui_nmmppr^dell^wo_{essuudiaamtidee}^d_llⁱ_tttss^oddcc_eitnee^nhs_hhtccao^st_ee⁼_wwloo_faddiq3iinn^tx_addu0t1ddttt_uttiee⁰⁷_tehhiira^μttss^5seiii^s_ttc==oo^W._n^ee_ffnn^c_33nii^o_xxss^,t_00n^ud_ttc00aauuo^tuup_{µµttrrm}^tru_eess^y11_rti..eee77^c_n^pn_cc^y55a_toc,,WW.l^lw_dd^ee_uuq⁼oo^r_ttuuu¹_yyitt⁰_eppcc^%_{syyuucccttellppeenoot==ww11cee00urr%%rrent.}
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
H^HV^VV^ViⁱS^Se^em^miⁱc^co^onⁿd^duc^ut^co^tr^os,^rsIn^{, I}cⁿ. ^c.
H11P^1P_00hV^0h_22oV²_33oen55^3eii⁵ⁿSSSx_ie,^S_..xm^._A55,5A11iz¹c_ssZ.tt^so8_.SS^tn_85tt^Sd_5..0^tu_0SS4^.c^S4_uut^u_ii4ottⁱree^ts^e,11I00¹n00⁰c⁰.
Phoenix, Az. 85044
ISO_IS9_O00₉1₀₀:2₁0_:20₀0₀C₀e_Crt_ei_rf_ti_ie_fid_ed
© 2T_©0e_TT0l_ee2^:8(_ll0⁸_::H₀⁶₍₍₈₈₈V6₆₆V)_H66i4_V))S2₄₄e_V⁹₂₂m-_i99^HISi_--ScV_HHeOoV_mVVni⁹ⁱd_VV⁽_c0⁴_ou_ii0⁸_nc₍₍₁⁸_d44t^:4o_u882^)r_c088so_t044,_o^rI0))rnv_sooCc_,ⁱ_rr^s._IeAi_vvn^triitl_c^w_ssl^i.fiiR^ittw_Aei_wwg^dlw_lh_ww^._R^ht_wws_i^v_g..Rv_hhh^ie_vv^._t^cs_svv^oe_iiRrm_..ccv_eooe_smmed_r._ved.
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG_E-_G01_-0-D₁S_-D10_SA_10A
EG¹-²0^/111¹-22¹D//^/_11S⁰_{22128//000A882}
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