HVV0405-175 Datasheet, PDF (1/5 Pages) HVVi Semiconductors, Inc. – UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications

The innovative Semiconductor Company!
HVV0405-175 High Voltage, High Ruggedness
TM
UHF Pulsed Power Transistor
400-500 MHz, 300μs Pulse, 10% Duty Cycle
For UHF band, Weather and Long Range Radar Applications
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the UHF
band including weather and long range radar applications.
MODE FREQUENCY
VDD
(MHz)
(V)
IDQ
Power GAIN EFFICIENCY IRL
(mA)
(W)
(dB)
(%)
(dB)
Class AB
450
50
50
175
25
55
20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
RF pulse conditions of pulse width = 300μs and pulse period = 3ms.
DESCRIPTION
The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for
pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology
produces over 175W of pulsed output power while offering high gain, high efficiency, and ease of matching
with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV0405-175
Demo Kit Part Number: HVV0405-175-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS10A
12/11/08
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