HFP840 Datasheet, PDF (2/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd.
HFP840
█ Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
Items
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
Min. Typ.
500
I_DSS Zero Gate Voltage Drain Current
I_GSS Gate – Body Leakage
On Characteristics
V_GS(th) Gate Threshold Voltage
2.0
R_DS(on) Static Drain-Source On-Resistance
g_FS Forward Transconductance
7.3
Dynamic Characteristics and Switching Characteristics
Ciss Input Capacitance
Coss ^{Output Capacitance}
Crss ^{Reverse Transfer Capacitance}
t_d(on)
tr
Turn - On Delay Time
Rise Time
t_d(off) Turn - Off Delay Time
t_f
Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
I_S
Continuous Source–Drain Diode
Forward Current
I_SM
Pulsed Drain-Source Diode
Forward Current
V_SD
Source–Drain Diode Forward
On–Voltage
Max.
25
250
±100
4.0
0.8
1800
190
45
55
140
260
160
63
9.3
32
8
32
2.0
Unit
V
µA
µA
nA
V
Ω
S
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
A
A
V
Conditions
I_D=250µA ,V_GS=0V
V_DS =500V, V_GS=0V
V_DS =400V, V_GS=0V,Tj=125℃
V_GS= ±20V , V_DS =0V
V_DS = V_GS , ID=250µA
V_GS=10V, ID=4A
V_DS=40V, ID=4 (Note 1)
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
V_DD = 250 V, I_D = 8Ak
R_G= 25 Ω (Note 1,2)
V_DS=0.8V_DSS, ID=8A,
V_GS = 10 V (Note 1,2)
I_S=8A,V_GS=0
Notes:
1. Pulse Test: Pulse width≤300μS,Duty cycle≤2%
2. Essentially independent of operating temperature