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HFP840 Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP840
N-Channel Enhancement Mode Field Effect Transistor
â General Description
these power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers. And DC-DC&DC-AC Converters for
Telecom, Industrial and Consumer Environment
â Features
⢠8A, 500V, RDS(on) <0. 8â¦@VGS = 10 V
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠Equivalent Type:IRF840
â Maximum Ratingsï¼Ta=25â unless otherwise specifiedï¼
TO-220
1- G 2-D 3-S
TstgââStorage Temperature ------------------------------------------------------ -55~150â
Tj ââOperating Junction Temperature -------------------------------------------------- 150â
VDSS ââ Drain-Source Voltage ---------------------------------------------------------- 500V
VDGR ââ Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 500V
VGSS ââ Gate-Source Voltage -------------------------------------------------------------------------- ±20V
ID ââ Drain Current (Continuous) ----------------------------------------------------------------------- 8A
PD ââ Maximum Power Dissipation --------------------------------------------------------------- 125W
IAR ââ Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ------------------------------------------------------- 8 A
EASââ Single Pulse Avalanche Energy
(starting Tj = 25â, ID = IAR, VDD = 50 V) --------------------------------------------------- 320 mJ
EARââ Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ
â Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.0
Max 62.5
Typ 0.5
Unit
â/W
â/W
â/W
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