HFP70N06 Datasheet, PDF (2/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd.
HFP70N06
█ Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
Items
Min. Typ.
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage 60
I_DSS Zero Gate Voltage Drain Current
I_GSS Gate – Body Leakage
On Characteristics
V_GS(th) Gate Threshold Voltage
2.0
R_DS(on) Static Drain-Source On-Resistance
Dynamic Characteristics and Switching Characteristics
Ciss Input Capacitance
4560
Coss ^{Output Capacitance}
430
Crss ^{Reverse Transfer Capacitance}
135
t_d(on) Turn - On Delay Time
37
tr Rise Time
20
t_d(off) Turn - Off Delay Time
140
t_f
Fall Time
30
Qg Total Gate Charge
85
Qgs Gate–Source Charge
28
Qgd Gate–Drain Charge
25
Rg Gate Resistance
2.4
Drain-Source Diode Characteristics and Maximun Ratings
I_S
Continuous Source–Drain Diode
Forward Current
I_SM
Pulsed Drain-Source Diode
Forward Current
V_SD
Source–Drain Diode Forward
On–Voltage
Max. Unit
Conditions
V
1 μA
±100 nA
I_D=250μA ,V_GS=0V
V_DS =60V, V_GS=0V
V_GS= ±20V , V_DS =0V
4.0 V V_DS = V_GS , ID=250μA
13 mΩ V_GS=10V, ID=40A (Note 2)
pF
V_DS = 25V, V_GS = 0V,
pF _{f = 1.0 MHz}
pF
nS
nS
V_DS = 30V, V_GS = 10 V,
RL =15Ω,R_G= 10 Ω
nS _{(Note 2)}
nS
nC
nC
V_DS=48V, ID=60A,
V_GS = 10V (Note 2)
nC
Ω ^f=1MHz
70 A
200 A
1.3
V ^{IS=40A,VGS=0(Note 2)}
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse width≤300μS, Duty Cycle≤2%