HFP70N06 Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd.
HFP70N06
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Servo motor control.
• Power MOSFET gate drivers.
• DC/DC converters
• Other switching applications.
█ Features
• 70A, 60V(See Note), R_DS(on) <13mVΩ@V_GS = 10 V
• Fast switching
• 100% avalanche tested
• Minimize input capacitance and gate charge
• Equivalent Type:ME70N06
TO-220
1- G 2-D 3-S
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
T_stg——Storage Temperature ------------------------------------------------------ -55~150℃
T_j ——Operating Junction Temperature -------------------------------------------------- 150℃
V_DSS —— Drain-Source Voltage ----------------------------------------------------------60V
V_GSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
I_D —— Drain Current (Continuous)(T_c=25℃)----------------------------------------------------------- 70A
I_DM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 200A
P_D —— Maximum Power Dissipation (T_c=25℃)------------------------------------------------------ 75W
(T_A=25℃)----------------------- -------------------------------- 4W
E_AS—— Pulsed Avalanche Energy ------------------------------------------------------------------- 350mJ
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 5.0
(T≤10sec) 8
(Steady State) 38
Unit
℃/W
℃/W