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| HCR22-8 Datasheet, PDF (2/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HCR22-8
â Electrical Characteristicsï¼Ta=25â unless otherwise specifiedï¼
Symbol
IDRM
Items
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
Min. Typ.
1.2
Max.
10
200
1.7
Unit
Conditions
VAK=VDRM
uA Ta=25â
Ta=125â
V ITM=3A,PEAK
IGT Gate Trigger Currentï¼2ï¼
VGT Gate Trigger Voltage (2)
VGD Non-Trigger Gate Voltage
IH
Holding Current
Rth(j-c) Thermal Resistance
uA VAK =6V(DC), RL=100 ohm
200
Ta=25â
500
Ta= -40â
V VAK =7V(DC), RL=100 ohm
0.8
Ta=25â
1.2
Ta= -40â
0.2
V VAK =12V, RL=100 ohm
Ta=125â
IT=100mA,Gate open,
2.0 5.0 mA Ta=25â
10
Ta= -40â
50 â/W Junction to Case
Rth(j-a) Thermal Resistance
160 â/W Junction to Ambient
dv/dt Critical Rate of Rise Off-state 200
Voltage
V/µs VD=VDRM67% exponential
Waveform Rjk=1Kohm Tj=125â
1. Forward current applied for 1 ms maximum duration,duty cycle â¤1%.
2. RGK current is not included in measurement.
â Performance Curves
FIGURE 1 â Gate Characteristics
FIGURE 2 â Maximum CaseTemperture
Gate Current (mA)
Average On-State Current (mA)
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