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HCR22-8 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCR22-8
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=1.5A)
* Low On-State Voltage (1.2V(Typ.)@ ITM)
█ General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
█ Absolute Maximum Ratings(Ta=25℃ unless otherwise specified)
Tstg——Storage Temperature ------------------------------------------------------ -40~125℃
Tj ——Operating Junction Temperature ---------------------------------------------- -40~125℃
VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT(RMS)——R.M.S On-State Current(180º Conduction Angles)------------------------------------------1.5A
IT(AV) ——Average On-State Current (Half Sine Wave : TC = 45 °C) ----------------------------------------1.0A
ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ------------------------- 15A
I2t ——Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------------- 0.9A2s
PGM ——Forward Peak Gate Power Dissipation (Ta=25℃) --------------------------------------------------- 2W
PG(AV) ——Forward Average Gate Power Dissipation (Ta=25℃,t=8.3ms) ---------------------------------0.1W
IFGM ——Forward Peak Gate Current -------------------------------------------------------------------------------- 1A
VRGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V