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| HCR1C60 Datasheet, PDF (2/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HCR1C60
Electrical Characteristics Ta=25
Symbol
IDRM
Items
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
Min.
Typ.
1.2
Max.
10
200
1.7
Unit
Conditions
VA K = VD R M
uA Ta=25
Ta=125
V ITM=1A,PEAK
IGT Gate Trigger Current 2
VG T Gate Trigger Voltage (2)
VGD Non-Trigger Gate Voltage
0.2
IH
Holding Current
Rth(j-c) Thermal Resistance
Rth(j-a) Thermal Resistance
dv/dt Critical Rate of Rise Off-state 200
Voltage
uA VAK =6V(DC), RL=100 ohm
200
Ta=25
500
Ta= -40
V VAK =6V(DC), RL=100 ohm
0.8
Ta=25
1.2
Ta= -40
V VAK =12V, RL=100 ohm
Ta=125
IT=100mA,Gate open,
2.0 5.0 mA Ta=25
10
Ta= -40
50
/W Junction to Case
160
/W Junction to Ambient
V/µs
VD=VDRM67% exponential
Waveform Rjk=1Kohm Tj=125
1. Forward current applied for 1 ms maximum duration,duty cycle 1%.
2. RGK current is not included in measurement.
Performance Curves
FIGURE 1 â Gate Characteristics
FIGURE 2 âMaximum CaseTemperture
Gate Current (mA)
Average On-State Current (mA)
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