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| HCR1C60 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HCR1C60
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=1A)
* Low On-State Voltage (1.2V(Typ.)@ ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings Ta=25
Tstg Storage Temperature ------------------------------------------------------ 40~150
Tj
Operating Junction Temperature --------------------------------------------------- 125
VDRM Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT RMS
R.M.S On-State Current 180ºConduction Angles ------------------------------------------1.0A
IT(AV)
Average On-State Current (Half Sine Wave : TC = 45 °C) ------------------------------------------0.8A
ITSM Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ------------------------- 10A
I2t
Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------------- 0.9A2s
PGM Forward Peak Gate Power Dissipation (Ta=25 ------------------------------------------------- 0.5W
PG(AV)
Forward Average Gate Power Dissipation (Ta=25
--------------------------------- 0.1W
IFGM Forward Peak Gate Current ------------------------------------------------------------------------------ 0.2A
VRGM Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
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