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| HCR100 Datasheet, PDF (2/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Sensitive Gate Silicon Controlled Rectifiers | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HCR100 Series
Electrical Characteristics Ta=25 , Rgk=1K ohm unless otherwise specified
Symbol
IDRM
Items
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
Min. Typ.
1.2
Max.
10
200
1.7
Unit
uA
V
Conditions
VAK=VDRM or VRRM
Ta=25
Ta=125
ITM=1A, Peak
IGT Gate Trigger Current 2
200 uA VAK =7V, RL=100 ohm
VGT Gate Trigger Voltage (2)
VGD Non-Trigger Gate Voltage
IH
Holding Current
Rth(j-c) Thermal Resistance
Rth(j-a) Thermal Resistance
V VAK =7V, RL=100 ohm
0.8
Ta=25
1.2
Ta=-40
0.2
V VAK =12V, RL=100 ohm
Ta=125
VAK =12V,Gate open, initiating
current=50mA
2
5.0 mA Ta=25
10
Ta=-40
60.0
/W Junction to Case
150
/W Junction to Ambient
1. Forward current applied for 1 ms maximum duration,duty cycle 1%.
2. RGK current is not included in measurement
Performance Curves
FIGURE 1 â HCR100-8 CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
FIGURE 2 â HCR100-8 CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
IT(AV), AVERAGE ON-STATE CURRENT
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