HCR100 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Sensitive Gate Silicon Controlled Rectifiers

HCR100 Series ^{Shantou Huashan Electronic Devices Co.,Ltd.}
Sensitive Gate
Silicon Controlled Rectifiers
Features
* Repetitive Peak Off-State Voltage : 400V thru 600V
* R.M.S On-State Current(I_T(RMS)=0.8A)
* Low On-State Voltage (1.2V(Typ.)@ I_TM)
General Description
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls,
gate drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily
adaptable for use in automatic insertion equipment.
Absolute Maximum Ratings T_a=25 unless otherwise specified
T_stg
T_j
V_DRM
Storage Temperature ------------------------------------------------------ -40~125
Operating Junction Temperature ---------------------------------------------- -40~125
Repetitive Peak Off-State Voltage MCR100-6 ----------------------------------------------- 400V
MCR100-8 -------------------------------------------- 600V
IT RMS
R.M.S On-State Current All Condition Angles ------------------------------------------ 0.8A
I_T(AV)
ITSM
I²t
Average On-State Current (Half Sine Wave : T_C = 74 °C) ------------------------------------ 0.5A
Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ----------------------- 10A
Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------- 0.415 A²s
P_GM
P_G(AV)
I_FGM
Forward Peak Gate Power Dissipation (T_a=25 ) ---------------------------------------------- 0.1W
Forward Average Gate Power Dissipation (T_a=25 ,t=8.3ms) -------------------------- 0.01W
Forward Peak Gate Current --------------------------------------------------------------------------- 1A
V_RGM Reverse Peak Gate Voltage --------------------------------------------------------------------------- 5V