HCP8C60 Datasheet, PDF (2/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier

Shantou Huashan Electronic Devices Co.,Ltd.
HCP8C60
█ Electrical Characteristics（T_a=25℃ unless otherwise specified）
Symbol
I_DRM
Items
Repetitive Peak Off-State
Current
V_TM Peak On-State Voltage (1)
Min. Typ.
Max.
10
200
1.6
Unit
Conditions
V_AK=V_DRM
uA T_c=25℃
T_c=125℃
V I_TM=16A,tp=380µs
I_GT Gate Trigger Current（2）
15
mA V_AK =6V(DC), R_L=10 ohm
V_GT Gate Trigger Voltage (2)
V_GD Non-Trigger Gate Voltage
0.2
I_H
Holding Current
Rth(j-c) ^{Thermal Resistance}
Rth(j-a) ^{Thermal Resistance}
dv/dt ^{Critical Rate of Rise Off-state} 200
Voltage
1.5
V V_AK =6V(DC), R_L=10 ohm
T_c=25℃
V V_AK =12V, R_L=100 ohm
T_c=125℃
20
IT=100mA,Gate open,
mA _Tc=25℃
1.3 ℃/W ^{Junction to Case}
60 ℃/W ^{Junction to Ambient}
V/µs ^{Linear slope up to VD=VDRM67%}
Gate open Tj=125℃
1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%.
2. R_GK current is not included in measurement
█ Performance Curves
FIGURE 1 – Gate Characteristics
FIGURE 2 – Maximum CaseTemperture
Gate Current (mA)
Average On-State Current (mA)