HCP8C60 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier

Shantou Huashan Electronic Devices Co.,Ltd.
HCP8C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(I_T(RMS)=8A)
* Low On-State Voltage (1.3V(Typ.)@ I_TM)
* Non-isolated Type
█ General Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
█ Absolute Maximum Ratings（T_a=25℃ unless otherwise specified）
T_stg——Storage Temperature ------------------------------------------------------ -40~125℃
T_j ——Operating Junction Temperature ---------------------------------------------- -40~125℃
V_DRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT（RMS）——R.M.S On-State Current（180º Conduction Angles）------------------------------------------8A
I_T(AV) ——Average On-State Current (Half Sine Wave : T_C = 111 °C) ----------------------------------------6.4A
ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A
I²t ——Circuit Fusing Considerations(t = 8.3ms) ------------------------------------------------------------ 60A²s
P_GM ——Forward Peak Gate Power Dissipation (T_a=25℃) --------------------------------------------------- 5W
P_G(AV) ——Forward Average Gate Power Dissipation (T_a=25℃,t=8.3ms) ---------------------------------0.5W
I_FGM ——Forward Peak Gate Current -------------------------------------------------------------------------------- 2A
V_RGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V