HC106D Datasheet, PDF (2/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Sensitive Gate Silicon Controlled Rectifier

Shantou Huashan Electronic Devices Co.,Ltd.
HC106D
Electrical Characteristics T_C=25 unless otherwise specified
Symbol
Items
Min. Typ. Max. Unit
Conditions
I_DRM Peak Repetitive Forward or
or Reverse Blocking Current.
I_RRM
V_TM Peak Forward On-State Voltage (1)
V_AK=Rated V_DRM or V_RRM
R_KG=1000 ohms
10 uA T_j=25
100
T_j=110
2.2
V I_FM=1A
I_GT Gate Trigger Current 2
V_GT Gate Trigger Voltage (2)
V_GRM ^{Peak Reverse Gate Voltage}
15 200
35 500
0.4 0.6 0.8
0.5 0.75 1.0
6.0
V_AK =6V(DC), R_L=100 ohms
uA T_j=25
T_j=-40
V_AK =6V(DC), R_L=100 ohms
V T_j=25
T_j=-40
V IGR=10 uA
V_GD Gate Non-Trigger Voltage
I_H
Holding Current
I_L
Latching Current
Rth(j-c) ^{Thermal Resistance}
0.2
V V_AK =12V, R_L=100 ohms
T_j=110
Initiating current=20mA,
Gate open, V_D =12V(DC)
0.19 3.0 mA T_j=25
0.33 6.0
T_j=-40
0.07 2.0
T_j=110
V_AK =12V, I_G=20mA
0.2
5.0 mA T_j=25
0.35
T_j=-40
3.0
/W ^{Junction to Case}
Rth(j-a) ^{Thermal Resistance}
75
/W ^{Junction to Ambient}
TL
dv/dt
Maximum Lead Temperature for
Soldering Purpose 1/8’’,from case
for 10 Seconds
Critical Rate-of-Rise Off-state
Voltage
260
8.0
V/µs ^{VAK= RatedVDRM ,Exponential}
waveform , R_GK=1000 ohms
Gate open Tj=110
(1) Pulse Test : Pulse Width 2.0ms,Duty Cycle 2%
(2) R_GK is not included in measurement