HC106D Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Sensitive Gate Silicon Controlled Rectifier

Shantou Huashan Electronic Devices Co.,Ltd.
HC106D
Sensitive Gate Silicon Controlled Rectifier
General Description
Glassivated PNPN devices designed for high volume consumer
applications such as temperature,light,and speed control;process
and remote control, and warning systems where reliability of
operation is important.
Features
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat,Rugged,Thermopad Construction for Low Thermal Resistance
Sensitive Gate Triggering
Maximum Ratings T_j=25 unless otherwise specified
T_stg Storage Temperature ------------------------------------------------------ -40~150
T_j
Operating Junction Temperature ---------------------------------------------- -40~110
V_DRM
Peak Repetitive Off-State Voltage(Forward) ------------------------------------------------------ 400V
V_RRM
Peak Repetitive Off-State Voltage(Reverse) ------------------------------------------------------- 400V
IT RMS
On-State R.M.S Current 180º Conduction Angles, T_C = 80 °C ----------------------------------4A
I_T(AV)
On-State Average Current (180º Conduction Angles, T_C = 80 °C) -------------------------------2.55A
ITSM Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, T_j = 110 °C) --------- 20A
I²t
Circuit Fusing Considerations(t = 8.3ms) ---------------------------------------------------------- 1.65A²s
P_GM
P_G(AV)
I_GM
Forward Peak Gate Power Dissipation (Pulse Width 1.0 µsec,T_c=80 ) ---------------------- 0.5W
Forward Average Gate Power Dissipation (Pulse Width 1.0 µsec, T_c=80 )------------------0.1W
Forward Peak Gate Current (Pulse Width 1.0 µsec, T_c=80 )-------------------------------------- 0.2A