HBT151 Datasheet, PDF (2/4 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier

Shantou Huashan Electronic Devices Co.,Ltd.
HBT151
Electrical Characteristics T_a=25
Symbol
I_DRM
Items
Repetitive Peak Off-State
Current
V_TM Peak On-State Voltage (1)
Min. Typ.
Max.
20
500
1.75
Unit
Conditions
V_{A K} = V_{D R M}
uA T_c=25
T_c=125
V I_TM=23A,tp=380µs
I_GT Gate Trigger Current 2
15
mA V_AK =12V(DC), R_L=10 ohm
V_{G T} Gate Trigger Voltage (2)
V_GD Non-Trigger Gate Voltage
0.2
I_H
Holding Current
Rth(j-c) ^{Thermal Resistance}
Rth(j-a) ^{Thermal Resistance}
dv/dt ^{Critical Rate of Rise Off-state}
50
Voltage
1.5
V V_AK =12V(DC), R_L=10 ohm
T_c=25
V V_AK =12V, R_L=100 ohm
T_c=125
IT=100mA,Gate open,
20
mA _Tc=25
1.3
/W ^{Junction to Case}
60
/W ^{Junction to Ambient}
V/µs ^{Linear slope up to}
VD= VDRM67%
Gate open Tj=125
1. Forward current applied for 1 ms maximum duration,duty cycle 1%.
2. R_GK current is not included in measurement
Performance Curves