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| HBT151 Datasheet, PDF (1/4 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HBT151
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=12A)
* Average On-State Current (IT(AV)=7.5A)
* Non-isolated Type
General Description
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage
capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static
switching.
Absolute Maximum Ratings Ta=25
Tstg Storage Temperature ------------------------------------------------------ 40~150
Tj
Operating Junction Temperature --------------------------------------------------- 125
VDRM Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT RMS
R.M.S On-State Current all conduction angles ----------------------------------------------12A
IT(AV)
ITSM
I2t
Average On-State Current (Half Sine Wave : TC = 109 °C) ----------------------------------------7.5A
Surge On-State Current (1/2 Cycle, 50Hz, Sine Wave, Non-repetitive) -------------------------- 100A
Circuit Fusing Considerations(t = 10ms) ------------------------------------------------------------- 50A2s
PGM Forward Peak Gate Power Dissipation (Ta=25 --------------------------------------------------- 5W
PG(AV)
Forward Average Gate Power Dissipation (over any 20 ms period ----------------------------0.5W
IFGM
VRGM
Forward Peak Gate Current -------------------------------------------------------------------------------- 2A
Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
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