XP151A13COMR Datasheet, PDF (3/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V N-Channel Enhancement Mode MOSFET

20V N-Channel Enhancement Mode MOSFET
Output Characteristics
10
V_GS = 5 thru 2.5 V
8
2V
6
4
2
0, 0.5, 1 V
1.5 V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
0.12
0.09
0.06
V_GS = 2.5 V
V_GS = 4.5 V
0.03
0
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 3.6 A
4
3
2
1
0
0
1
2
3
4
5
6
7
Q_g – Total Gate Charge (nC)
XP151A13COMR
Transfer Characteristics
10
8
6
4
T_C = 125_C
2
0
0
1000
25_C
–55_C
0.5
1.0
1.5
2.0
2.5
V_GS – Gate-to-Source Voltage (V)
Capacitance
800
600
400
C_iss
200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 4.5 V
I_D = 3.6 A
1.6
1.4
1.2
1.0
0.8
0.6
–50
0
50
100
150
T_J – Junction Temperature (_C)
JinYu
semiconductor
www.htsemi.com