XP151A13COMR Datasheet, PDF (2/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V N-Channel Enhancement Mode MOSFET

20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance ¹⁾
BV_DSS V_GS = 0V, I_D = 10uA
RDS(on)
V_GS = 4.5V, I_D = 3.6A
VGS = 2.5V, ID = 3.1A
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance ¹⁾
Dynamic
V_GS(th)
I_DSS
I_GSS
g_fs
V_DS =V_GS, I_D = 250uA
V_DS = 16V, V _GS = 0V
VDS = 20V, V GS = 0V TJ=55^oC
V_GS = ± 8V, V_DS = 0V
V_DS = 5V, I_D = 3.6A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q_g
Q_gs
Qgd
td(on)
t_r
td(off)
tf
VDS = 10V, I D = 3.6A
V_GS = 4.5V
V_DD = 10V, RL=5.5 Ω
I_{D ^} 3.6A,V _GEN = 4.5V
R_G = 6Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
Coss
Crss
V_DS = 10V, V_GS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 1.6A, V GS = 0V
1) _{Pulse test: pulse width <= 300us, duty cycle<= 2%}
XP151A13COMR
Min.
Typ.
Miax.
Unit
20
V
70
85
mΩ
85
115
0.6
V
1
uA
10
±100
nA
10
S
5.4
10
0.65
nC
1.6
12
25
36
60
ns
34
60
10
25
340
115
pF
33
1.6
A
1.2
V
JinYu
semiconductor
www.htsemi.com