PT8822 Datasheet, PDF (2/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V Dual N-Channel Enhancement Mode MOSFET

20V Dual N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
BVDSS VGS = 0V, ID = 250uA
RDS(on) VGS = 1.8V, ID = 2A
RDS(on) VGS = 2.5V, ID = 5.5A
RDS(on) VGS = 4.5V, ID = 6.6A
VGS(th) VDS =VGS, ID = 250uA
IDSS VDS = 20V, VGS = 0V
IGSS VGS = ± 12V, VDS = 0V
gfs VDS = 5V, ID = 7A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 10V, ID = 7A
VGS = 4.5V
VDD = 10V,
ID = 1A, VGEN = 4.5V
RG = 6Ω
VDS = 10V, VGS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 1A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
PT8822
Min. ^{Typ. Max.} Unit
20
V
36.0 50.0
25.0
32.0
mΩ
19.0 24.0
0.4
1
V
1
uA
±100
nA
17.7
S
8.19
10
1
nC
1.93
10.87
6.03
ns
28.07
4.33
836.88
126.53
pF
92.78
2.5
A
1.2
V
JinYu
semiconductor
www.htsemi.com