PT8822 Datasheet, PDF (1/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V Dual N-Channel Enhancement Mode MOSFET

20V Dual N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ
RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Ideal for Li ion battery pack applications
Package Dimensions
1
D1
S1 ²
3
S1
4
G1
8
D2
7
S2
6
S2
5
G2
PT8822
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
θ
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 ^oC
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
VGS
± 12
Continuous Drain Current
ID
7
Pulsed Drain Current
Maximum Power Dissipation
IDM
25
TA = 25^oC
2
TA = 75^oC
PD
1.2
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
R_θJA
62.5
Unit
V
A
W
o_C
o_C/W
JinYu
semiconductor
www.htsemi.com