PT8205A Datasheet, PDF (2/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V Dual N-Channel Enhancement Mode MOSFET

20V Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic ¹⁾
BVDSS VGS = 0V, ID = 250uA
RDS(on) VGS = 2.5V, ID = 5.2A
R_DS(on) V_GS = 4.5V, I_D = 6A
V_GS(th) V_DS =V_GS, I_D = 250uA
I_DSS V_DS = 20V, V_GS = 0V
I_GSS VGS = ± 8V, V DS = 0V
g_fs V_DS = 5V, I_D =6A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
V_DS = 10V, I_D = 6A
V_GS = 4.5V
V_DD = 10V, R_G = 6Ω
I_D = 1A, V_GS= 4.5V
V_DS = 8V, V_GS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
I_S
Diode Forward Voltage
V_SD I_S = 1.7A, V_GS = 0V
1) _{Pulse test: pulse width <= 300us, duty cycle<= 2%}
PT8205A
Min.
Typ.
Max. Unit
20
-
-
V
30.0 38
mΩ
21.0 28
0.6
1.5
V
1
uA
±100
nA
22
S
5
1.1
nC
2.1
10
20
11
25
ns
35
70
30
60
600
330
pF
140
1.7
A
0.72
1.2
V
JinYu
semiconductor
www.htsemi.com