PT8205A Datasheet, PDF (1/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V Dual N-Channel Enhancement Mode MOSFET

20V Dual N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38mΩ
RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Ideal for Li ion battery pack applications
PT8205A
1
D1
2
S1
3
S1
4
G1
8
D2
7
S2
6
S2
5
G2
TSSOP-8
REF.
A
. ^A1
A2
b
C
D
E
Millimeter
Min.
Max.
1.20 MAX.
0.05
0.80
0.19
0.90
2.90
0.15
1.05
0.30
0.20
3.00
6.40BSC
REF.
E1
e
L
θ
Millimeter
Min.
Max.
4.30
4.50
0.65BSC
0.45
0.75
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
± 12
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
I_D
6
I_DM
20
TA = 25^oC
1.6
TA = 75^oC
P_D
1
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
T_J, T_stg
R_θJA
-55 to 150
78
Notes
1) _{Pulse width limited by maximum junction temperature.}
2) _{Surface Mounted on FR4 Board, t v 5 sec.}
Unit
V
A
W
o_C
o_C/W
JinYu
semiconductor
www.htsemi.com