PT8205 Datasheet, PDF (2/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V Dual N-Channel Enhancement Mode MOSFET

20V Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic
BVDSS VGS = 0V, ID = 250uA
RDS(on) VGS = 2.5V, ID = 3.4A
R_DS(on) V_GS = 4.0V, I_D = 4.3A
V_GS(th) V_DS =V_GS, I_D = 250uA
I_DSS V_DS = 16V, V_GS = 0V
I_GSS V_GS = ± 8V, V_DS = 0V
g_fs V_DS = 5V, I_D = 4A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
V_DS = 10V, I_D = 4A
V_GS = 4V
V_DD = 10V, R_G = 10 Ω
I_D = 1A, V_GS = 4V
V_DS = 8V, V_GS = 0V
f = 1.0 MHz
Max. Diode Forward Current
I_S
Diode Forward Voltage
V_SD
IS ^{= 1.7A, V}GS ^{= 0V}
N¹⁾ ote:Pulse test: pulse width <= 300us, duty cycle<= 2%
PT8205
Min.
Typ. Max. Unit
20
V
35
46
mΩ
27
30
0.5
0.8
1.5
V
1
uA
±100
nA
10
S
11
2.2
nC
2.5
18.3
4.8
ns
43.5
20
800
155
pF
125
2
A
0.8
1.2
V
JinYu
semiconductor
www.htsemi.com