PT8205 Datasheet, PDF (1/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V Dual N-Channel Enhancement Mode MOSFET

20V Dual N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@2.5V, Ids@3.4A 46mΩ
RDS(ON), Vgs@4.V, Ids@4.3A 30mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Ideal for Li ion battery pack applications
Package Dimensions
SOT-163
PT8205
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
θ
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0°
10°
0.30 0.50
0.95 REF.
1.90 REF.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
± 12
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
I_D
4
I_DM
25
TA = 25^oC
1.4
TA = 75^oC
P_D
1
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
T_J, T_stg
R_θJA
-55 to 150
100
Notes
1) _{Pulse width limited by maximum junction temperature.}
2) _{Surface Mounted on FR4 Board, t v 5 sec.}
Unit
V
A
W
o_C
o_C/W
JinYu
semiconductor
www.htsemi.com