BC847S Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

BC847S
Typical Characteristics
I —— V
C
CE
50
COMMON EMITTER
Ta=25 ^oC
40
100uA
90uA
80uA
30
70uA
60uA
50uA
20
40uA
30uA
10
20uA
I =10uA
B
0
0
10
20
30
40
50
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
—— I
CEsat
C
1000
COMMON EMITTER
I /I =20
CB
300
100
Ta=100 ^oC
Ta=25 ^oC
30
1000
300
100
30
10
1
1000
900
800
700
600
500
400
300
200
10
1
100
30
10
3
1
0.3
0.1
0.0
1000
3
10
30
COLLECTOR CURRENT I (mA)
C
I —— V
C
BE
100
200
V =5V
CE
Ta=25 ^oC
0.2
0.4
0.6
0.8
1.0
BASE-EMMITER VOLTAGE V (V)
BE
f —— I
T
C
100
1
10
9
8
7
6
5
4
3
2
1
1
300
250
300
200
100
150
30
10
1
2
JinYu
semiconductor
COMMON EMITTER
V =5V
CE
Ta=25 ^oC
3
10
30
100
COLLECTOR CURRENT I (mA)
C
100
50
0
0
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h —— I
FE
C
Ta=100 ^oC
COMMON EMITTER
V =5V
CE
Ta=25 ^oC
3
10
30
COLLECTOR CURRENT I (mA)
C
V
—— I
BEsat
C
Ta=25 ^oC
Ta=100 ^oC
100
200
COMMON EMITTER
I /I =20
CB
3
10
30
100
200
COLLECTOR CURRENT I (mA)
C
C —— V
ob
CB
f=1MHz
I =0
E
Ta=25 ^oC
3
10
30
100
COLLECTOR-BASE VOLTAGE V (V)
CB
P —— T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T (oC)
a
Date:2011/ 05