BC847S Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

Multi-chip transistor (NPN)
APPLICATION
This device is designed for general purpose amplifier applications
Marking :1C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
45
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
200
PD
Power Dissipation
200
RθJA
Thermal Resistance. Junction to Ambient
625
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~+150
Units
V
mA
mW
℃/W
℃
BC847S
SOT-363
C1
B2
E2
E1
B1
C2
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO I_C=10µA,I_E=0
V(BR)CEO I_C=1mA,I_B=0
V(BR)EBO I_E=10µA,I_C=0
Collector cut-off current
ICBO
V_CB=30V,I_E=0
Emitter cut-off current
I_EBO
VEB =4V , IC=0
DC current gain*
h_FE
V_CE=5V,I_C=2mA
Collector-emitter saturation voltage
VCE(sat)(1) I_C=10mA,I_B=0.5mA
VCE(sat)(2) I_C=100mA,I_B=5mA
Base-emitter voltage
VBE(1)
VBE(2)
V_CE=5V,I_C=2mA
V_CE=5V,I_C=10mA
Transition frequency
f_T
V_CE=5V,I_C=20mA ,f=100MHz
Collector output capacitance
Cob
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
V_CB=10V,I_E=0,f=1MHz
Min
Typ
Max Unit
50
V
45
V
6
V
15
nA
15
110
630
0.25
V
0.65
V
0.58
0.7
V
0.77
V
200
MHz
2
pF
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05